pentakis (dimethylamino) tantalum (PDMAT) can be used as a precursor of TaN, has excellent electrical conductivity, and can be used in the manufacture of electrode parts of semiconductor devices. It is used as a diffusion barrier in the semiconductor back-end process. It can also be used for metallization of the anode of photovoltaic cells. It is used as a precursor for metal gate materials in CMOS processes below 45nm.

Pentakis (dimethylamino) tantalum can be used to prepare Ta2O5, which has a high dielectric constant, as a dynamic random access memory (DRAM), anti-reflective film, high temperature impedance, gas sensors, capacitors, high refractive low dispersion special optical glass, aviation field of high temperature special ceramics key materials.

Pentakis (dimethylamino) tantalum selectively catalyzes the synthesis of chiral drugs with higher stereoselectivity, provide additional oxygen source in the enzyme-catalyzed reaction, improve the reaction efficiency and stability, and as a new carrier material, adjust the physical and chemical properties of the catalyst to achieve drug delivery and release.

Tetrakis (dimethylamino) titanium (TDMAT) is a research hotspot in the field of ALD and CVD; it can be used as a precursor material of titanium dioxide.

Titanium dioxide is a very important high-k and metal gate material in technologies below 32nm, and can be used as an electron transport layer material for n-type semiconductors. Doping with other compounds, dielectric materials with ultra-high dielectric constant and low dielectric loss can be obtained. Can be used in the manufacture of small devices for capacitors and random dynamic memories; Titanium dioxide layer can be prepared into mesoporous structure and dense composite structure, can improve the film-forming properties of perovskite layers; nano-titanium dioxide can be used as a photocatalyst material to completely degrade organic pollutants in water; thin film transistors alternately stacked with titanium dioxide and indium oxide will have higher electrical properties; titanium dioxide coatings can also be used as antibacterial coatings on space stations.

TDMAT can also be deposited to obtain TiN/TiO2 nano-composite film, which can be used as a dental step degradation barrier; TDMAT and ammonia can be used to obtain TiN nano-film by plasma enhanced atomic layer deposition, which can be used in the field of vacuum electronic devices, inhibit surface secondary electron emission phenomenon, and improve the performance of spacecraft and its components.

hafnium-based amino metal compounds can be used as precursor materials for CVD and ALD to deposit hafnium precursors and prepare hafnium oxide thin films. It can be used as high-k insulating materials for COMS and next-generation DRAM, and is widely used in advanced CMOS integrated circuit technologies such as 45nm up to 7nm technology.

Its application in the research of new resistive/memristive devices (RRAM) can show good miniaturization characteristics and maintain good resistive characteristics at a scale of 10nm. It shows good miniaturization characteristics in the manufacture of new functional devices such as ferroelectric memory devices (FeRAM), ferroelectric field effect transistors (FeFET), ferroelectric negative capacitor transistors (NC-FET), ferroelectric tunnel junctions and so on, it provides a new way for the research and development of transformative technologies such as brain-like neuromorphic computing.

Replacing silicon dioxide as the gate of a metal-oxide-semiconductor field effect transistor (MOSFET).

Zirconium metal amide compounds are mainly used in CVD, ALD, plasma enhanced atomic layer deposition (PEALD) processes, and are precursors for the production of ZrO2.

ZrO2 replaces silica in the preparation of 45nm transistors, which can significantly reduce leakage. It is also a high-k insulating material for COMS and dynamic storage (DRAM), and is one of the most preferred materials to solve the technical problems of dynamic storage and high-definition display. It can be used as a dielectric layer precursor for resistive memory; It can be used as a precursor for coating and deposition of positive electrode of lithium ion battery.

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