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Tetrakis (methylethylamino) hafnium (IV) | TEMAH | Hf[N(CH3)(C2H5)]4 | 6N
Tetrakis (methylethylamino) hafnium (IV) | TEMAH | Hf[N(CH3)(C2H5)]4 | 6N
Tetrakis(methylethylamino)hafnium(IV) can be used as a precursor for thin-film deposition to prepare hafnium oxide thin films, which are high-k insulating materials that can be applied to new functional devices such as COMS and next-generation DRAMs, novel resistive/memory-retardant devices (RRAMs), ferroelectric memory devices (FeRAMs), and ferroelectric tunnel junctions.
Name: Tetrakis (ethylmethylamino) hafnium (IV); TEMAH
Chemical formula: Hf[N(CH3)(C2H5)]4
Molecular weight: 410.9
CAS No.: 352535-01-4
Melting point: <-50°C
Boiling point: 78°C
Flash Point: 52 °F
Density: 1.324 g/mL at 25°C(lit.)
Appearance: Colorless to yellow liquid
Storage conditions: 2-8°C
