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Tetrakis (diethylamino) zirconium (IV) | TDEAZ | Zr[N(CH2CH3)2]4 | 6N

Tetrakis (diethylamino) zirconium (IV) is precursor of ZrO2 in chemical deposition process, known as high-k insulating materials in COMS and DRAM; a resistive memory dielectric layer precursor; lithium-ion battery anode cladding deposition precursor. It is used to prepare specialty ceramics; catalyst of bridged metallocene compounds.
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Product Details

Name: Tetrakis (diethylamido) zirconium (IV); TDEAZ
Chemical formula: Zr[N(CH2CH3)2]4
Molecular weight: 164.36
CAS No.: 13801-49-5
Melting point: <-20°C
Boiling point: 128°C

Flash point: 54 °F
Density: 1.026 g/mL at 25°C (lit.)

Appearance: yellow liquid
Storage conditions: 2-8°C