• Chromium Hexacarbonyl | Cr(CO)6 | 4N

      As catalysis, mainly used in conjugated double bond selective hydrogenation, isomerization, water gas conversion and alkylation of aromatics and other catalytic reactions. As precursor of deposition, it is used to prepare chromium by laser chemical vapor deposition method (LCVD), which is used to repair transparent defects in photomask version.

      넶119 ¥ 0.00

    • Tungsten hexacarbonyl | W(CO)6 | 4N

      Tungsten hexacarbonyl catalyze epoxidation, cycloaddition, isomerization and other organic reactions. In the field of thin film deposition, tungsten hexacarbonyl deposits tungsten film, which is applied to absorb sunlight, used as lateral photovoltaic effect of photoelectric detector. Unlike WF6, depositing tungsten hexacarbonyl produce no hydrogen fluoride, protecting the substrate and equipment from corrosion.

      넶76 ¥ 0.00

    • Molybdenum hexacarbonyl | Mo(CO)6 | 4N

      Hexacarbonyl molybdenum is used as a catalyst for the synthesis of edoxaban intermediates, intermediates of dapagliflozin, key raw materials of vildagliptin, and tetrahydroindane compounds.
      It is also used to deposit metal molybdenum, which is used to replace pure silicon or pure aluminum material in the connecting and gate parts of integrated circuits.

      넶77 ¥ 0.00

    • Dicobalt Octacarbonyl | Co2(CO)8 | 4N

      Dicobalt octacarbonyl is used as a catalyst for the synthesis of high-efficiency herbicide glyphosate (commonly known as "Roundup"), anti-tumor reagent N-((5-bromothiophen-2-yl) sulfonyl)-2,4-dichlorobenzamide, hydroxycitronellol, pineapple ester, functional oligosaccharide stachyose intermediates. It is also the raw material for the synthesis of critical semiconductor precursors dicarbonyl cyclopentadienyl cobalt [CpCo(CO)2] and (3,3-dimethyl-1-butynyl)dicobalt hexacarbonyl [CCTBA].

      넶139 ¥ 0.00

    • Hafnium tetrachloride | HfCl4 | 99.9%

      Hafnium tetrachloride is used in a variety of specific applications, mainly in materials science, or as a catalyst.

      넶75 ¥ 0.00

    • Chromium trichloride (anhydrous) | CrCl3

      Anhydrous chromium trichloride is an important raw material in organometallic chemistry. Many organic chromium compounds can be prepared from it.

      넶45 ¥ 0.00

    • Tungsten hexachloride | WCl6

      Dark blue or blue-purple crystal. Easily soluble in carbon disulfide, soluble in ether, ethanol, benzene, carbon tetrachloride. When heated, it is oxidized by oxygen in the air to form tungsten chloride oxide (WOCl4, WO2Cl2) or tungsten trioxide. Tungsten hexachloride containing tungsten chloride is easily decomposed by water vapor.

      넶27 ¥ 0.00

    • Ruthenium(III) chloride hydrate | RuCl3·xH2O

      Ruthenium(III) chloride hydrate can be used as a desiccant, adsorbent, catalyst carrier, multi-phase catalysis or homogeneous catalysis, and can also be used as a catalyst for oxidation reaction between electroplating, electrolysis anode and oxidant.

      넶38 ¥ 0.00
    넳 넲
  • 넳 넲

    • Pentakis (dimethylamino) tantalum (V) | PDMAT | Ta[N(CH3)2]5 | 6N

      Pentakis(dimethylamino)tantalum(V) catalyzes the formation of C-N bonds; provide additional oxygen in enzyme-catalyzed reactions; and serve as a novel carrier material for drug delivery. It can be used to deposit TaN, which is widely used as a diffusion barrier layer; to deposit Ta2O5, which is a key component of DRAM.

      넶42 ¥ 0.00

    • Tetrakis (dimethylamino) titanium (IV) | TDMAT | Ti[N(CH3)2]4 | 6N

      Tetrakis (dimethylamino) titanium (IV) can be dissolved in alcohols, benzene, carbon tetrachloride and other organic solvents, not only has good stability, high vapor pressure, but also shows a very high reactivity.

      넶29 ¥ 0.00

    • Tetrakis (dimethylamino) hafnium (IV) | TDMAH | Hf[N(CH3)2]4 | 6N

      Tetrakis(methylethylamino)hafnium(IV) can be used as a precursor for thin-film deposition to prepare hafnium oxide thin films, which are high-k insulating materials that can be applied to new functional devices such as COMS and next-generation DRAMs, novel resistive/memory-retardant devices (RRAMs), ferroelectric memory devices (FeRAMs), and ferroelectric tunnel junctions.

      넶50 ¥ 0.00

    • Tetrakis (diethylamino) hafnium (IV) | TDEAH | Hf[N(CH2CH3)2]4 | 6N

      Tetrakis(methylethylamino)hafnium(IV) can be used as a precursor for thin-film deposition to prepare hafnium oxide thin films, which are high-k insulating materials that can be applied to new functional devices such as COMS and next-generation DRAMs, novel resistive/memory-retardant devices (RRAMs), ferroelectric memory devices (FeRAMs), and ferroelectric tunnel junctions.

      넶28 ¥ 0.00

    • Trimethyl Aluminum | TMA | 6N

      To prepare trimethylalumoxane, the most important co-catalysts in metallocene catalytic systems which catalysis the stereotactic polymerization of olefins. TMA is also used as catalysis itself, and being an important alkylation reagent in the fine organic synthesis chemical industry. Be used as liquid fuel for rockets.

      넶49 ¥ 0.00

    • Trimethylgallium | TMGa | 6N

      Trimethyl gallium can be used for metal organic chemical vapor deposition (MOCVD), to prepare GaAs, AsGaAl and other semiconductor compounds. It is gallium source in the manufacture of light-emitting diodes and other electronic components, also in the manufacture of solar cells.

      넶24 ¥ 0.00

    • Trimethylindium | TMIn | 6N

      Trimethylindium is used as a high-quality solid indium source for semiconductor compound deposition, for use in light-emitting diodes, laser diodes, and transistors in high-performance and high-efficiency solar cells.

      넶16 ¥ 0.00

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