Tungsten hexacarbonyl | W(CO)6 | 4N

Tungsten hexacarbonyl catalyze epoxidation, cycloaddition, isomerization and other organic reactions. In the field of thin film deposition, tungsten hexacarbonyl deposits tungsten film, which is applied to absorb sunlight, used as lateral photovoltaic effect of photoelectric detector. Unlike WF6, depositing tungsten hexacarbonyl produce no hydrogen fluoride, protecting the substrate and equipment from corrosion.

Tungsten hexachloride | WCl6

Dark blue or blue-purple crystal. Easily soluble in carbon disulfide, soluble in ether, ethanol, benzene, carbon tetrachloride. When heated, it is oxidized by oxygen in the air to form tungsten chloride oxide (WOCl4, WO2Cl2) or tungsten trioxide. Tungsten hexachloride containing tungsten chloride is easily decomposed by water vapor.

Tungsten pentacarbonyl-N-pentylisonitrile | W(CO)5CN(CH2)4CH3 | 98%

Molecular weight: 421.05 | CAS number: 347145-09-9

Bis(acetonitrile) tungsten tetracarbonyl | W(CO)4(CH3CN)2 | 98%

Molecular weight: 377.98 | CAS number: 16800-45-6

Mesitylene tungsten tricarbonyl | [C6H3-1,3,5-(CHз)3]W(CO)3 | 98%

Molecular weight: 388.08 | CAS number: 12129-69-0

Molybdenum hexacarbonyl | Mo(CO)6 | 4N

Hexacarbonyl molybdenum is used as a catalyst for the synthesis of some pharmaceutical intermediates and flavors.
It is also used to deposit metal molybdenum, which is used to replace pure silicon or pure aluminum material in the connecting and gate parts of integrated circuits.

Bis(acetonitrile) tetracarbonyl molybdenum (0) | Mo(CO)4(CH3CN)2 | 98%

Molecular weight: 290.08 | CAS number: 14126-87-5

Tricarbonyl tris (propionitrile) molybdenum (0) | Mo(CO)3(NCCH2CH3)3 | 98%

Molecular weight: 345.21 | CAS number: 103933-26-2

Triamminemolybdenum(0) tricarbonyl | (NH3)3Mo(CO)3 | 98%

Molecular weight: 231.06 | CAS number: 18177-91-8

Cycloheptatriene molybdenum tricarbonyl | Mo(CO)3(C7H8) | 98%

Molecular weight: 272.11 | CAS number: 12125-77-8

Chromium Hexacarbonyl | Cr(CO)6 | 4N

As catalysis, mainly used in conjugated double bond selective hydrogenation, isomerization, water gas conversion and alkylation of aromatics and other catalytic reactions. As precursor of deposition, it is used to prepare chromium by laser chemical vapor deposition method (LCVD), which is used to repair transparent defects in photomask version.

Chromium trichloride (anhydrous) | CrCl3

Anhydrous chromium trichloride is an important raw material in organometallic chemistry. Many organic chromium compounds can be prepared from it.

(Ethyl benzoate) tricarbonyl chromium (0) | Cr(CO)3(C9H10O2) | 98%

Molecular weight: 286.2 | CAS number: 32874-26-3

Tris (acetonitrile) tricarbonyl chromium (0) | Cr(CO)3(CH3CN)3 | 98%

Molecular weight: 259.18 | CAS number: 16800-46-7

Tricarbonyl(cycloheptatriene) chromium | Cr(CO)3(C7H8) | 98%

Molecular weight: 228.16 | CAS number: 12125-72-3

(methyl benzoate)Tricarbonyl chromium | Cr(CO)3(C8H8O2) | 98%

Molecular weight: 272.18 | CAS number: 12125-87-0

Benzene chromium tricarbonlyl | Cr(CH6)(CO)3 | 98%

英文名：Benzene chromium tricarbonlyl

Chromium Chloride Tetrahydrofuran Complex (1:3) | CrCl4·3THF

Molecular weight: 374.67 | CAS number: 10170-68-0

Dicobalt Octacarbonyl | Co2(CO)8 | 4N

Dicobalt octacarbonyl is used as a catalyst for the synthesis of high-efficiency herbicide glyphosate (commonly known as "Roundup"), anti-tumor reagent N-((5-bromothiophen-2-yl) sulfonyl)-2,4-dichlorobenzamide, hydroxycitronellol, pineapple ester, functional oligosaccharide stachyose intermediates. It is also the raw material for the synthesis of critical semiconductor precursors dicarbonyl cyclopentadienyl cobalt [CpCo(CO)2] and (3,3-dimethyl-1-butynyl)dicobalt hexacarbonyl [CCTBA].

Dicarbonyl cyclopentadienyl cobalt | CpCo(CO)2 | 98%

Catalysts for cyclotrimerization of alkynes. Regulate the process of conversion of allene diyne to tricyclic system via [2 2 2]-cyclization reaction.

(3,3-dimethyl-1-butyne) dicobalt hexacarbonyl | CCTBA | 98%

(3,3-dimethyl-1-butyne) hexacarbonyl dicobalt is an important precursor for the preparation of cobalt metal, cobalt nitride, cobalt silicide, etc., especially for the application of cobalt barrier layer/lining layer, co-cover layer and co-seed layer, with excellent performance. In the case of barrier and seed layers, the cobalt film exhibits high conductivity for subsequent seed formation and electroplating steps.

Tetracobalt dodecacarbonyl | Co4(CO)12 | 98%

Molecular weight: 571.85 | CAS number: 17786-31-1

Triruthenium dodecacarbonyl | Ru3(CO)12 | 4N

Triruthenium dodecacarbonyl can be used as a catalyst for the [3+2+1] carbonyl cycloaddition of silylacetylene analogs and α,β-unsaturated ketones to obtain α-pyranones in high yields; it is used as a precursor for carbonyl clusters and as a hydrogen-transfer catalyst; be used in the reductive carbonylation to produce urethane esters, etc.

Ruthenium(III) chloride hydrate | RuCl3·xH2O

Ruthenium(III) chloride hydrate can be used as a desiccant, adsorbent, catalyst carrier, multi-phase catalysis or homogeneous catalysis, and can also be used as a catalyst for oxidation reaction between electroplating, electrolysis anode and oxidant.

Bis(ethylcyclopentadiene) ruthenium | Ru(CpEt)2 | 5N

Bis(ethylcyclopentadienyl) magnesium | Mg(CpEt)2 | 5N

Pentakis (dimethylamino) tantalum (V) | PDMAT | Ta[N(CH3)2]5 | 6N

Pentakis(dimethylamino)tantalum(V) catalyzes the formation of C-N bonds; provide additional oxygen in enzyme-catalyzed reactions; and serve as a novel carrier material for drug delivery. It can be used to deposit TaN, which is widely used as a diffusion barrier layer; to deposit Ta2O5, which is a key component of DRAM.

Titanium tetrachloride tetrahydrofuran complex (1:2) | TiCl4·(THF)2

Titanium tetrachloride tetrahydrofuran complex (1:2), with Lewis acid properties, commonly used as organic synthesis reagents. It can be used as a catalyst for various Friedel-Crafts reactions to synthesize aromatic compounds.
Titanium tetrachloride tetrahydrofuran complexes can be used as intermolecular hydroamination reaction catalysts.

Tetrakis (dimethylamino) titanium (IV) | TDMAT | Ti[N(CH3)2]4 | 6N

Tetrakis (dimethylamino) titanium (IV) can be dissolved in alcohols, benzene, carbon tetrachloride and other organic solvents, not only has good stability, high vapor pressure, but also shows a very high reactivity.

Hafnium tetrachloride | HfCl4 | 99.9%

Hafnium tetrachloride is used in a variety of specific applications, mainly in materials science, or as a catalyst.

Tetrakis (methylethylamino) hafnium (IV) | TEMAH | Hf[N(CH3)(C2H5)]4 | 6N

Tetrakis(methylethylamino)hafnium(IV) can be used as a precursor for thin-film deposition to prepare hafnium oxide thin films, which are high-k insulating materials that can be applied to new functional devices such as COMS and next-generation DRAMs, novel resistive/memory-retardant devices (RRAMs), ferroelectric memory devices (FeRAMs), and ferroelectric tunnel junctions.

Tetrakis (diethylamino) hafnium (IV) | TDEAH | Hf[N(CH2CH3)2]4 | 6N

Tetrakis(methylethylamino)hafnium(IV) can be used as a precursor for thin-film deposition to prepare hafnium oxide thin films, which are high-k insulating materials that can be applied to new functional devices such as COMS and next-generation DRAMs, novel resistive/memory-retardant devices (RRAMs), ferroelectric memory devices (FeRAMs), and ferroelectric tunnel junctions.

Tetrakis (dimethylamino) hafnium (IV) | TDMAH | Hf[N(CH3)2]4 | 6N

Tetrakis(methylethylamino)hafnium(IV) can be used as a precursor for thin-film deposition to prepare hafnium oxide thin films, which are high-k insulating materials that can be applied to new functional devices such as COMS and next-generation DRAMs, novel resistive/memory-retardant devices (RRAMs), ferroelectric memory devices (FeRAMs), and ferroelectric tunnel junctions.

Tetrakis (methylethylamino) zirconium (IV) | TEMAZ | Zr[N(CH3)(C2H5)]4 | 6N

Tetrakis(methylethylamino) zirconium(IV) is precursor of ZrO2 in chemical deposition process, known as high-k insulating materials in COMS and DRAM; a resistive memory dielectric layer precursor; lithium-ion battery anode cladding deposition precursor. It is used to prepare specialty ceramics; catalyst of bridged metallocene compounds.

Tetrakis (diethylamino) zirconium (IV) | TDEAZ | Zr[N(CH2CH3)2]4 | 6N

Tetrakis (diethylamino) zirconium (IV) is precursor of ZrO2 in chemical deposition process, known as high-k insulating materials in COMS and DRAM; a resistive memory dielectric layer precursor; lithium-ion battery anode cladding deposition precursor. It is used to prepare specialty ceramics; catalyst of bridged metallocene compounds.

Tetrakis (dimethylamino) zirconium (IV) | TDMAZ | Zr[N(CH3)2]4 | 6N

Tetrakis (dimethylamino) zirconium (IV) is precursor of ZrO2 in chemical deposition process, known as high-k insulating materials in COMS and DRAM; a resistive memory dielectric layer precursor; lithium-ion battery anode cladding deposition precursor. It is used to prepare specialty ceramics; catalyst of bridged metallocene compounds.

Trimethyl Aluminum | TMA | 6N

To prepare trimethylalumoxane, the most important co-catalysts in metallocene catalytic systems which catalysis the stereotactic polymerization of olefins. TMA is also used as catalysis itself, and being an important alkylation reagent in the fine organic synthesis chemical industry. Be used as liquid fuel for rockets.

Trimethylgallium | TMGa | 6N

Trimethyl gallium can be used for metal organic chemical vapor deposition (MOCVD), to prepare GaAs, AsGaAl and other semiconductor compounds. It is gallium source in the manufacture of light-emitting diodes and other electronic components, also in the manufacture of solar cells.

Trimethylindium | TMIn | 6N

Trimethylindium is used as a high-quality solid indium source for semiconductor compound deposition, for use in light-emitting diodes, laser diodes, and transistors in high-performance and high-efficiency solar cells.

Bis (dimethylamino-2-propoxy) copper | Cu(dmap)2 | 5N

Copper(Ⅱ) hexafluoroacetylacetonate hydrate | Cu(CF3COCHCOCF3)2 | 5N

Tetrakis(dimethylamino) tin | TDMASn | Sn[N(CH3)2]4 | 6N

Molecular weight: 295.01 | CAS number: 1066-77-9

Bis(Methylcyclopentadienyl) nickel | Ni(MeCp)2 | 5N

Nickelocene | NiCp2 | 5N

Nickelocene is mainly used as hydrocarbon refining catalyst, hydrogenation catalyst, free radical polymerization inhibitor, vulcanization accelerator, and fuel anti-vibration agent. It is also used for nickel plating, preparation of high purity nickel, etc.

Yttrium isopropoxide | C9H21O3Y

Tris(cyclopentadiene) yttrium | YCp3 | 5N

Tris(cyclopentadiene) yttrium can be used as pharmaceutical synthesis intermediates, can be used in laboratory research and development process, and chemical pharmaceutical synthesis process.