Series Products

 

by Ligand
by Element
Tungsten
Molybdenum
Chromium
Cobalt
  • Dicobalt Octacarbonyl | Co2(CO)8 | 4N

    Dicobalt octacarbonyl is used as a catalyst for the synthesis of high-efficiency herbicide glyphosate (commonly known as "Roundup"), anti-tumor reagent N-((5-bromothiophen-2-yl) sulfonyl)-2,4-dichlorobenzamide, hydroxycitronellol, pineapple ester, functional oligosaccharide stachyose intermediates. It is also the raw material for the synthesis of critical semiconductor precursors dicarbonyl cyclopentadienyl cobalt [CpCo(CO)2] and (3,3-dimethyl-1-butynyl)dicobalt hexacarbonyl [CCTBA].

    141 ¥ 0.00
  • Dicarbonyl cyclopentadienyl cobalt | CpCo(CO)2 | 98%

    Catalysts for cyclotrimerization of alkynes. Regulate the process of conversion of allene diyne to tricyclic system via [2 2 2]-cyclization reaction.

    27 ¥ 0.00
  • (3,3-dimethyl-1-butyne) dicobalt hexacarbonyl | CCTBA | 98%

    (3,3-dimethyl-1-butyne) hexacarbonyl dicobalt is an important precursor for the preparation of cobalt metal, cobalt nitride, cobalt silicide, etc., especially for the application of cobalt barrier layer/lining layer, co-cover layer and co-seed layer, with excellent performance. In the case of barrier and seed layers, the cobalt film exhibits high conductivity for subsequent seed formation and electroplating steps.

    41 ¥ 0.00
  • Tetracobalt dodecacarbonyl | Co4(CO)12 | 98%

    Molecular weight: 571.85 | CAS number: 17786-31-1

    17 ¥ 0.00
Ruthenium
  • Triruthenium dodecacarbonyl | Ru3(CO)12 | 4N

    Triruthenium dodecacarbonyl can be used as a catalyst for the [3+2+1] carbonyl cycloaddition of silylacetylene analogs and α,β-unsaturated ketones to obtain α-pyranones in high yields; it is used as a precursor for carbonyl clusters and as a hydrogen-transfer catalyst; be used in the reductive carbonylation to produce urethane esters, etc.

    37 ¥ 0.00
  • Ruthenium(III) chloride hydrate | RuCl3·xH2O

    Ruthenium(III) chloride hydrate can be used as a desiccant, adsorbent, catalyst carrier, multi-phase catalysis or homogeneous catalysis, and can also be used as a catalyst for oxidation reaction between electroplating, electrolysis anode and oxidant.

    38 ¥ 0.00
Magnesium
Tantalum
  • Pentakis (dimethylamino) tantalum (V) | PDMAT | Ta[N(CH3)2]5 | 6N

    Pentakis(dimethylamino)tantalum(V) catalyzes the formation of C-N bonds; provide additional oxygen in enzyme-catalyzed reactions; and serve as a novel carrier material for drug delivery. It can be used to deposit TaN, which is widely used as a diffusion barrier layer; to deposit Ta2O5, which is a key component of DRAM.

    42 ¥ 0.00
Titanium
  • Titanium tetrachloride tetrahydrofuran complex (1:2) | TiCl4·(THF)2

    Titanium tetrachloride tetrahydrofuran complex (1:2), with Lewis acid properties, commonly used as organic synthesis reagents. It can be used as a catalyst for various Friedel-Crafts reactions to synthesize aromatic compounds.
    Titanium tetrachloride tetrahydrofuran complexes can be used as intermolecular hydroamination reaction catalysts.

    35 ¥ 0.00
  • Tetrakis (dimethylamino) titanium (IV) | TDMAT | Ti[N(CH3)2]4 | 6N

    Tetrakis (dimethylamino) titanium (IV) can be dissolved in alcohols, benzene, carbon tetrachloride and other organic solvents, not only has good stability, high vapor pressure, but also shows a very high reactivity.

    29 ¥ 0.00
Hafnium
  • Hafnium tetrachloride | HfCl4 | 99.9%

    Hafnium tetrachloride is used in a variety of specific applications, mainly in materials science, or as a catalyst.

    75 ¥ 0.00
  • Tetrakis (methylethylamino) hafnium (IV) | TEMAH | Hf[N(CH3)(C2H5)]4 | 6N

    Tetrakis(methylethylamino)hafnium(IV) can be used as a precursor for thin-film deposition to prepare hafnium oxide thin films, which are high-k insulating materials that can be applied to new functional devices such as COMS and next-generation DRAMs, novel resistive/memory-retardant devices (RRAMs), ferroelectric memory devices (FeRAMs), and ferroelectric tunnel junctions.

    36 ¥ 0.00
  • Tetrakis (diethylamino) hafnium (IV) | TDEAH | Hf[N(CH2CH3)2]4 | 6N

    Tetrakis(methylethylamino)hafnium(IV) can be used as a precursor for thin-film deposition to prepare hafnium oxide thin films, which are high-k insulating materials that can be applied to new functional devices such as COMS and next-generation DRAMs, novel resistive/memory-retardant devices (RRAMs), ferroelectric memory devices (FeRAMs), and ferroelectric tunnel junctions.

    28 ¥ 0.00
  • Tetrakis (dimethylamino) hafnium (IV) | TDMAH | Hf[N(CH3)2]4 | 6N

    Tetrakis(methylethylamino)hafnium(IV) can be used as a precursor for thin-film deposition to prepare hafnium oxide thin films, which are high-k insulating materials that can be applied to new functional devices such as COMS and next-generation DRAMs, novel resistive/memory-retardant devices (RRAMs), ferroelectric memory devices (FeRAMs), and ferroelectric tunnel junctions.

    50 ¥ 0.00

Zirconium
  • Tetrakis (methylethylamino) zirconium (IV) | TEMAZ | Zr[N(CH3)(C2H5)]4 | 6N

    Tetrakis(methylethylamino) zirconium(IV) is precursor of ZrO2 in chemical deposition process, known as high-k insulating materials in COMS and DRAM; a resistive memory dielectric layer precursor; lithium-ion battery anode cladding deposition precursor. It is used to prepare specialty ceramics; catalyst of bridged metallocene compounds.

    30 ¥ 0.00
  • Tetrakis (diethylamino) zirconium (IV) | TDEAZ | Zr[N(CH2CH3)2]4 | 6N

    Tetrakis (diethylamino) zirconium (IV) is precursor of ZrO2 in chemical deposition process, known as high-k insulating materials in COMS and DRAM; a resistive memory dielectric layer precursor; lithium-ion battery anode cladding deposition precursor. It is used to prepare specialty ceramics; catalyst of bridged metallocene compounds.

    32 ¥ 0.00
  • Tetrakis (dimethylamino) zirconium (IV) | TDMAZ | Zr[N(CH3)2]4 | 6N

    Tetrakis (dimethylamino) zirconium (IV) is precursor of ZrO2 in chemical deposition process, known as high-k insulating materials in COMS and DRAM; a resistive memory dielectric layer precursor; lithium-ion battery anode cladding deposition precursor. It is used to prepare specialty ceramics; catalyst of bridged metallocene compounds.

    40 ¥ 0.00
Aluminum
  • Trimethyl Aluminum | TMA | 6N

    To prepare trimethylalumoxane, the most important co-catalysts in metallocene catalytic systems which catalysis the stereotactic polymerization of olefins. TMA is also used as catalysis itself, and being an important alkylation reagent in the fine organic synthesis chemical industry. Be used as liquid fuel for rockets.

    49 ¥ 0.00
Gallium
  • Trimethylgallium | TMGa | 6N

    Trimethyl gallium can be used for metal organic chemical vapor deposition (MOCVD), to prepare GaAs, AsGaAl and other semiconductor compounds. It is gallium source in the manufacture of light-emitting diodes and other electronic components, also in the manufacture of solar cells.

    24 ¥ 0.00
Indium
  • Trimethylindium | TMIn | 6N

    Trimethylindium is used as a high-quality solid indium source for semiconductor compound deposition, for use in light-emitting diodes, laser diodes, and transistors in high-performance and high-efficiency solar cells.

    16 ¥ 0.00
Copper
Tin
Nickel
Yttrium
  • Tris(cyclopentadiene) yttrium | YCp3 | 5N

    Tris(cyclopentadiene) yttrium can be used as pharmaceutical synthesis intermediates, can be used in laboratory research and development process, and chemical pharmaceutical synthesis process.

    20 ¥ 0.00